Structure and lattice location of Ge implanted 4H-SiC

Pseudomorphic 4H-(Si1-xC1-y)Gex+y solid solutions were formed by ion implantation at 600°C and subsequent rapid thermal annealing if the implantation dose is kept below 10%. At higher doses and subsequent annealing 3C-SiC inclusion and SiGe precipitates are formed. Transmission electron microscopy investigations accompanied with “atomic location by channeling enhanced microanalysis” of the annealed samples revealed an increasing Si lattice site incorporation of Ge.