The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer
The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer
Tyschenko, I. E.; Voelskow, M.; Cherkov, A. G.; Popov, V. P.
Abstract
RBS investigations on Ge+ implanted silicon films on insulators
Keywords: Si/Ge films; implantation; RBS
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Lecture (Conference)
3rd International Conference "Micro&Nano2007" on Micro- Nanoelectronics, Nanotechnology and MEMs, 18.-21.11.2007, Athen, Greece
Permalink: https://www.hzdr.de/publications/Publ-10586
