Cluster growth and luminescence in ion-implanted silica

Fitting, H.-J.; Salh, R.; Kourkoutis, L.; Schmidt, B.

Cluster growth and luminescence in ion-implanted silica

Fitting, H.-J.; Salh, R.; Kourkoutis, L.; Schmidt, B.

Abstract

Scanning electron microscopy (SEM) and cathodoluminescence (CL) in
combination with scanning transmission electron microscopy (STEM) have been used
to investigate thermally grown amorphous silicon dioxide layers implanted
isoelectronically with group IV ions (C+, Si+, Ge+, Sn+, Pb+) as well as with group VI
ions (O+, S+, Se+).

Keywords: Cathodoluminescence; Silica layers; Ion implantation

Vortrag (Konferenzbeitrag)
14th European Microscopy Congress, 01.-05.09.2008, Aachen, Germany
Beitrag zu Proceedings
14th European Microscopy Congress, 01.-05.09.2008, Aachen, Germany
S. Richter, A. Schwedt (Eds.):EMC 2008, Vol. 2: Materials Science, Berlin Heidelberg: Springer-Verlag, 17-18

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