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High-Resolution Depth Profiling of thin high-k layers by means of HRBS

Vieluf, M.; Grötzschel, R.; Neelmeijer, C.; Kosmata, M.; Teichert, S.

Abstract

The increasing interest in new high-k materials in MOS technology enforces the development of new analytical techniques to characterize the depth dependent elemental composition in ultrathin layers of such materials. The well established methods of ion beam materials analysis (IBA) as Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Spectrometry (ERDA) can also provide depth profiles of elements and isotopes with subnanometer depth resolution. These techniques base upon the binary elastic nuclear scattering with well known cross sections and are therefore absolutely quantitative and standard-free. The high energy resolution necessary for high depth resolution is achieved using magnetic spectrometers.
We have installed a magnetic spectrometer of the Browne-Buechner-type at the 3 MV Tandetron accelerator of the FZD, which can provide a wide variety of MeV ions both for RBS and for ERDA. To minimise deterioration of the layers due to electronic sputtering during the measurements we implemented a multi-pad position sensitive detector (PSD) in the experimental setup to increase the solid angle and reduce the measurement time. This type of detector gives also the information needed for kinematical corrections. In this poster we describe the high-resolution spectrometer with the improved detector system and show the recent results.

Keywords: RBS Rutherford Backscattering Spectrometry; HR-RBS High Resolution Rutherford Backscattering Spectrometry; Dielectrica; High-k Materials; Sub-Nanometer

  • Poster
    72. Jahrestagung der DPG und DPG Frühjahrstagung des Arbeitskreises Festkörperphysik mit anderen Fachverbänden und den Arbeitskreisen der DPG, 26.02.2008, Berlin, Deutschland

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