Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Characterization of Defects in Ion Implanted SiC by Slow Positron Implantation Spectroscopy and Rutherford Backscattering

Anwand, W.; Brauer, G.; Coleman, P. G.; Voelskow, M.; Skorupa, W.

• Applied Surface Science 149 (1999) 148-150
  DOI: 10.1016/S0169-4332(99)00191-9
  Cited 3 times in Scopus
• Vortrag (Konferenzbeitrag)
  8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept. 6 - 12, 1998
• Vortrag (Konferenzbeitrag)
  30th Polish Seminar on Positron Annihilation, Jarnoltowek, Sept. 17-21, 1998

Permalink: https://www.hzdr.de/publications/Publ-1291