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1 PublikationAnomalous Hall resistance in Ge:Mn systems with low Mn concentrations
Zhou, S.; Bürger, D.; Helm, M.; Schmidt, H.
Abstract
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn.
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Applied Physics Letters 95(2009), 172103
DOI: 10.1063/1.3257363
Cited 15 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-13227