Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

We investigated the as-implanted profiles, electrical activation, diffusion, and recrystallization of gallium implanted in germanium samples through the combination of secondary-ion mass spectrometry, transmission electron microscopy, and sheet resistance measurement. Because of their high activation level (4.4 x 1020 cm−3) without preamorphization, low activation temperature (400°C), and absence of diffusion (up to 700°C), Ga junctions in crystalline Ge are very promising candidates for implementation in germanium technology. In the amorphous Ge phase, an increased diffusivity of Ga was observed at temperatures above 400°C.