Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates partly covered with silicon dioxide to produce SOl structures were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400 C after preamorphisation of the transition region layer/substrate. The implantation with a dose of 5E17 cm-2 into the wafers with SOl structure resulted in a 1.5 um wide overgrown crystalline layer.