Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

(100) Si was implanted at 150 or 100 keV with fluences from 5 E 15 to 2 E16 cm^-2. The samples were processed by rapid thermal annealing at temperatures between 1000 and 1200°C and dwell times at T(max) from 1 to 30 s. As depth distributions were measured by RBS and SIMS. By comparison of experimental profiles with computer simulations based on the diffusion model proposed by Tsai et al. and including a time independent enhancement factor or a transient enhancement according to Fair a transient enhanced diffusion has been found. The influence of As clustering or precipitation on the diffusion behaviour of high concentrations is discussed. The comparison of samples implanted through 30 nm SiO2 or in bare Si shows an enhanced As concentration at the SiO2 interface and a decreased diffusivity for the former case. These effects are explained by an interaction of As with oxygen recoil atoms.