Photothermal measurements of Al+ and Al+/N+ implanted 6H-SiC

Thermal wave measurements on 6H-SiC with a particular emphasis on Al+ and Al+/N+ implanted 6H-SiC was carried out. The 6H-SiC wafers were implanted at different substrate temperatures. The photothermal measurements of the conversion coefficient K and the reflectivity R show a strong dependence on the implantation temperature. This result is discussed in relation to Rutherford backscattering spectrometry/ion channeling measurements. The behaviour of the reflectivity in dependence on the implantation conditions could be modelized by using a simple two layer optical model. The carried out investigations of the implanted SiC demonstrate, that photothermal methods are suitable for both research and on-line production use.