High-temperature high-dose implantation of N- and Al⁺ ions in 6H–SiC

A series of experimental and theoretical investigations has been initiated for 6H–SiC samples sequentially implanted with high doses of N⁺(65 keV) + N⁺(120 keV) + Al⁺(100 keV) + Al⁺(160 keV) ions at temperatures between 200 and 800 °C. Nitrogen and carbon distribution profiles are measured by ERD and structural defect distributions are measured by Rutherford backscattering with channeling. A comparison between the experimental data and the results of computer simulation yields a physical model to describe the relaxation processes of the implanted SiC structure, where the entire implanted volume is divided into regions of different depth, having different guiding kinetics mechanisms.