Computer simulation and RBS/C studies of high-dose N + and Al + co-implantation in 6H-SiC

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Kharlamov, V. S.; Kulikov, D. V.; Truschin, Y. V.; Tsigankov, D. N.; Voelskow, M.; Skorupa, W.; Pezoldt, J.

Abstract

Computer simulation and RBS/C studies of high-dose N + and Al + co-implantation in 6H-SiC

Keywords: Computer simulation; RBS; ion implantation; 6H-SiC

Permalink: https://www.hzdr.de/publications/Publ-13754