Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Germanium is currently considered as a potential replacement for silicon devices [1]. The formation of heavily doped, shallow junctions in Ge by ion im-plantation and appropriate annealing techniques is under investigation [2, 3]. In contrast to Si the Ge surface is severely affected by irradiation damage. Im-plantation into the uncovered Ge surface leads to sur-face roughening and even porous layers [3]. Therefore, the Ge surface must be protected by a thin cover layer, which is commonly a sputtered SiO2-layer between 10 and 30 nm. This cover layer remains on the Ge sample also during annealing. For light dopants like B or P this oxide layer remains stable and smooth. However, with increasing ion mass and fluence surface erosion and oxide degradation can occur. A relatively heavy ion of interest is Ga [3]. It is a shallow acceptor with a high solid solubility in Ge. We studied the effect of Ga im-plantation through a SiO2 cover layer.