Eigenschaften und Mikrostruktur von mittels gepulstem reaktivem Magentronsputtern abgeschiedenen Metalloxid-Schichten

An overview of the activity on metal oxides grown by reactive pulsed magnetron sputtering (RPMS) is presented, including high refractive index materials (Nb2O5) and transparent conductive oxides (Sn-doped In2O3 and Al-doped ZnO). For Nb2O5 the influence of process parameters such as plasma density and substrate temperature on optical properties, their thermal stability and film microstructure are discussed. In case of Sn-doped In2O3 (ITO) it is shown that by isothermal or electric current annealing amorphous films crystallize at different activation energies and that the resistivity decreases in two steps ascribed to relaxation and Sn donor activation. Finally it is shown that by RPMS films of Al-doped ZnO (AZO) with high mobility (45 cm²/Vs) can be obtained. The existence and dependence of an optimum substrate temperature for maximum mobility is discussed. Furthermore it is shown that in polycrystalline AZO the carrier mobility is limited by a combination of ionized impurity scattering and grain boundary limited transport depending on the carrier concentration. These effects are also influenced by the Al concentration in the sputtering target.