Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells
Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells
Wagner, M.; Schneider, H.; Stehr, D.; Winnerl, S.; Andrews, A. M.; Schartner, S.; Strasser, G.; Helm, M.
Abstract
The near-infrared transmission of a semiconductor multiple quantum well is probed under intense terahertz illumination. We observe clear evidence of the intraexcitonic Autler-Townes effect when the terahertz beam is tuned near the 1s-2p transition of the heavy-hole exciton. The strongly coupled effective two-level system has been driven with terahertz field strengths of up to 10 kV/cm resulting in a Rabi energy of ≈0.6 times the transition energy. The induced near-infrared spectral changes at low intensities are qualitatively explained using a basic two-level model.
Keywords: Autler-Townes effect; AC Stark; intraexciton; free-electron laser
Beteiligte Forschungsanlagen
- Strahlungsquelle ELBE DOI: 10.17815/jlsrf-2-58
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 14738) publication
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Physical Review Letters 105(2010), 167401
DOI: 10.1103/PhysRevLett.105.167401
Cited 125 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-14738