Direct evidence of long lived trapped carriers in InGaAs/GaAs quantum dots studied using terahertz-activated luminescence measurements
Direct evidence of long lived trapped carriers in InGaAs/GaAs quantum dots studied using terahertz-activated luminescence measurements
Bhattacharyya, J.; Wagner, M.; Helm, M.; Hopkinson, M.; Wilson, L. R.; Schneider, H.
Abstract
Trapped carrier dynamics in semiconductor quantum dots (QDs) have been studied using terahertz activated luminescence. This technique enabled us to isolate the luminescence emitted by the trapped carriers from the photoluminescence due to interband excitation. Trapped carriers having long lifetimes ~ 250 ns at 8 K were observed. Temperature dependence of the trapped carrier lifetime was measured. Activation energy for the trapped carrier decay rate was found to be close to the intersublevel transition energy of the QDs.
Keywords: trapped carriers; quantum dots; terahertz activated luminescence
Beteiligte Forschungsanlagen
- Strahlungsquelle ELBE DOI: 10.17815/jlsrf-2-58
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 14755) publication
-
Vortrag (Konferenzbeitrag)
ICPS-30, 25.07.2010, Seoul, South Korea -
Beitrag zu Proceedings
ICPS 2010, 30th International Conference on the Physics of Semiconductors, 25.-30.07.2010, Seoul, South Korea
AIP Conference Proceedings 1399(2011)593
Permalink: https://www.hzdr.de/publications/Publ-14755
