Stacking-order dependent transport properties of trilayer graphene

We reportmarkedly different transport properties ofABA- andABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of nu = 2,4,6, . . . with a step of Δnu = 2, whereas the inversion-symmetric ABC trilayer exhibits plateaus at nu = 6 and 10 with fourfold spin and valley degeneracy.