Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Multicrystalline p-type silicon wafers were used for the implantation of phosphorous. After ion implantation the silicon is strongly disordered or amorphous within the ion range. Therefore subsequent annealing is required to remove the implantation damage and to activate the doping element. The influence of the annealing types (furnace annealing - FA, rapid thermal annealing – RTA and Flash-lamp-annealing – FLA) on the optical and electrical properties of mc-Si solar cell was investigated. FLA offers here an alternative route for the emitter formation at an overall low thermal budget. During FLA, only the wafer surface is heated homogeneously to very high temperatures at ms time scales, resulting in the annealing of the implantation damage and an electrical activation of the phosphorous. However, a variation of the pulse time also allows to modify the degree of annealing of the bulk region to some extent as well, which can have an influence on the gettering behaviour of metallic bulk impurities.