Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

According to the continuously shrinking of semiconductor device dimensions the fabrication of ultra-shallow pn-junctions is the essential requirement for modern CMOS technology. Therefore the importance of measurement techniques for dopant depth profiles is rising and the demands in resolution and accuracy are continuously increasing. The established methods like SIMS and spreading resistance profiling become less suitable for these applications because of their disadvantages at measurements close to the silicon surface. The Stepwise Oxidation Profiling (SWOP) is a new measurement technique for ultra shallow boron doped layers with pn-junction depths less than 20 nm. SWOP is based on the continuous anodic oxidation technique (CAOT) proposed by S. Prusin [1] and was applied to boron doped layers formed by ion implantation with rapid thermal annealing and by a new doping technique called flash lamp diffusion (FLD).
[1] S. Prussin, AIP Conference Proceedings 931, 275 (2007).