Ferromagnetic Ge:Mn prepared by ion implantation and pulsed laser annealing
Ferromagnetic Ge:Mn prepared by ion implantation and pulsed laser annealing
Zhou, S.; Bürger, D.; Li, L.; Skorupa, W.; Helm, M.; Oesterlin, P.; Schmidt, H.
Abstract
We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by
pulsed laser annealing. The implanted Ge layer was recrystallized during annealing. We observed that the longitudinal and
Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated
ferromagnetism.
Keywords: Magnetic semiconductors; materials for magnetotransport; Magnetotransport phenomena; Elemental semiconductors; Spin polarized transport in semiconductors
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 16492) publication
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AIP Conference Proceedings 1399(2011), 699
DOI: 10.1063/1.3666569
Cited 1 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-16492
