Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

GaAs is being widely used in optical communication devices in virtue of its outstanding luminescent and electronic performances. Many approaches have been applied to GaAs based materials, to realize the luminescence in fiber-optic transmission windows.

In this contribution, we present a novel method to achieve the 1.3 μm light emission by defect-induced luminescent centers. N, Bi and Mn were doped into GaAs wafers by ion-implantation and then their incorporation into GaAs lattice was carried out by flash lamp annealing (FLA). The optical and structural properties of the samples were investigated by micro-Raman spectroscopy, temperature dependent photoluminescence and positron annihilation spectroscopy. For the intrinsic and the N or Bi incorporated GaAs, a strong luminescence peak occurs at 1.3 μm. On the other hand, Mn-doping had suppressed this luminescence. Results have shown that for the 1.3 μm emission the donor and acceptor pairs are responsible. Furthermore, it is noticeable that the 1.3 μm light emission exhibited outstanding thermal stability (e.g., 20nm red-shift and 58% intensity decline as temperature rose from 20 K to room temperature). Our investigation suggests that GaAs treated by flash lamp annealing (i.e. a chip-relevant technology) exhibits a promising prospect on applications of light emitters and detectors for optical communication devices.