Thermal Effect on Electroluminescence Quenching in SiO2 with Ge and ReOX Nanoclusters

Thermal quenching and thermal dependences of the electrical quenching of electroluminescence in metal-oxide-silicon lightemitting devices implanted by Ge and Tb ions containing Ge and TbOx nanoclusters after annealing are studied. Light thermal quenching of the main green line (541 nm) in the EL spectrum of Tb implanted structures is observed. The strong temperature dependence of the electrical quenching of EL both for Ge and Tb implanted structures is explained by the participation of mobile ions in negative and positive charge generation in the bulk of SiO2 and near the SiO2-Si interface, correspondingly.