Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

The structural optimization of polycrystalline silicon films is important to improve the electronic properties of microelectronic devices and photovoltaic solar cells, based on thin film silicon. The enlargement of the grain size is of big interest since the fabrication of silicon based thin film devices started. In this work we present results on the lateral dendritic growth in 100nm thin silicon layers which leads to lateral grain sizes in the range of 100µm. The second topic in this field is the manipulation of the grain lattice orientation within the layer which can lead to a uniformly oriented polycrystalline material.