Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Ion implantation is a standard process in semiconductor tech¬nology. However, since a doping of metals typically does not have such a tremendous effect as compared to semiconductors ion implantation in metals to achieve a desired electrical, optical or magnetic property is much less explored. A combination of litho-graphy and ion implantation to achieve a lateral ion implantation pattern is a novel route to design and construct artificial materials like photonic or magnonic crystal which rely on the local band gap or spin wave dispersion engineering [1].
The contribution will provide an overview over the different physical mechanisms which allow modifying and tailoring the dynamical magnetic properties, i. e., magnetic damping even in an anisotropic fashion, aiming at the creation of new functional materials. In one example [2] it is demonstrated that the mag¬netic damping parameter in a ferromagnetic/antiferromag¬ne¬tic/ferro¬magnetic trilayer stack can be continuously and spatially varied between two extremal values (see Fig. 1). In a second example [3] the creation of a lateral magnetization pattern by ion implantation gives rise to additional and anisotropic relaxation channels. Potential areas of application are magnonic crystals and band-stop filters in the GHz range.

Acknowledgement: This work was supported by Deutsche Forschungsgemeinschaft SFB491, FA 314/3, FA314/6-1 and MC 9/7.

[1] J. Fassbender, J. McCord, J. Magn. Magn. Mater. 320, 579 (2008).
[2] J. McCord, T. Strache, I. Mönch, R. Mattheis, J. Fassbender, Phys. Rev. B 83, 224407 (2011).
[3] I. Barsukov, F. M. Römer, R. Meckenstock, K. Lenz, J. Lindner, S. Hemken to Krax, A. Banholzer, M. Körner, J. Grebing, J. Fassbender, M. Farle, Phys. Rev. B 84, 140410(R) (2011).