Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling
Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling
Zhou, S.; Chen, L.; Shalimov, A.; Zhao, J.; Helm, M.
Abstract
We provide a direct measurement of the tetragonal distortion in thick GaMnAs as a function of depth by Rutherford backscattering combining with channeling. The thick GaMnAs film is tetragonally strained and the tetragonal distortion is found to be depth independent. Our finding excludes strain relaxation as the origin of the uniaxial in-plane magnetic anisotropy observed in GaMnAs.
Keywords: Rutherford backscattering/channeling spectrometry
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 17861) publication
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AIP Advances 2(2012), 042102
DOI: 10.1063/1.4757917
Cited 4 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-17861
