Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

The periodical semiconductor nanostructure arrays have the potential for nano-electronic and nano-optoelectronic application. Comparing to the conventional low efficiency lithographic techniques broad ion beam erosion is a simple and potentially mass productive technique to fabricate the nanostructure patterns on semiconductor surface.[1] Based on a “self-organized” erosion process, periodical nanoripple, nanohole, nanodot and nanotip arrays can be created due to the interplay of different processes.[2] As the ion beam erosion is performed on Si /Ge thin layer on insulator substrate and precisely ceased when the nanopattern moves to the interface of the buried oxide layer, an array of separate nanostructure can be fabricated on insulator. This work reports the fabrication of the horizontal silicon nanowire arrays on insulator by Xe+ beam erosion of Si-on-insulator substrate [3] (figure 1a). A periodic ripple surface pattern on Si is created by ion irradiation with Xe+ at an incidence angle of 67o to the surface normal. The transfer of the pattern to the oxide interface results in an array of disconnected parallel ordered Si nanowires.The electrical doping behaviour of the fabricated Si nanowire was investigated by scanning spreading resistance microscopy (SSRM). Meanwhile, we will also report our recent discover of single crystal Ge nanopattern formation based on “negative epitaxy” process (figure 1b). The vacancies created during the ion beam sputtering will be distributed according to the crystallographic anisotropy, which results in the orientation-dependent pattern formation on single crystal Ge surface. The mechanism of this novel process will be discussed.
[1] Stefan Facsko et al. Science 285, 1551 (1999).
[2] C. S. Madi et al. Phys. Rev. Lett. 106, 066101 (2011).
[3] Xin Ou et al. AIP Advances, 1, 042174 (2011).