Ion Induced Patterns on Crystalline Ge Surfaces

Low energy ion irradiations of surfaces can induce the formation of patterns with periodicities in the range of tens to hundreds of nanometers. These patterns have been used as templates for growing thin films with interesting anisotropic properties resulting from the modulation of their interface and surface [1].
At off-normal angle of incidence between around 55° and 70° and at room temperature ripple patterns oriented perpendicular to the ion beam direction are observed. At normal incidence or for incidence angles smaller than 55° smoothing dominates on elemental materials, like Si and Ge. However, additional surface instabilities can exist due to the presence of a second atomic species on the surface. Furthermore, on crystalline surfaces anisotropic diffusion or kinetic restrictions can also lead to additional instabilities.
We studied ion induced pattern formation on Ge surfaces with 1 keV Ar+ at elevated temperature. In contrast to irradiations at room temperature we found pattern formation even at normal ion incidence. Similar to the case of ion irradiated crystalline metal surfaces a new instability appears at higher temperature due to the Ehrlich-Schwoebel barrier [2]. Depending on the surface orientation checkerboard or isotropic hole patterns with the symmetry of the patterns reflecting the crystal structure of the irradiated surface are observed (see Fig. 1a, b).