Ion-beam synthesis of magnetic semiconductors
Ion-beam synthesis of magnetic semiconductors
Potzger, K.
Abstract
This review focuses on current research on the topic of ion beam based approaches for the fabrication of magnetic semiconductors. Among them, classic semiconductors such as Si, Ge, GaAs as well as solid–gas compounds such as ZnO or GaN doped with transition metals are currently in the focus of research. Those are considered to be basic materials for future spintronics devices. In the review also possible pitfalls leading to misinterpretation of the data obtained will be discussed.
Keywords: Ion implantation; Diluted magnetic semiconductors
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 18315) publication
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Nuclear Instruments and Methods in Physics Research B 272(2012), 78-87
DOI: 10.1016/j.nimb.2011.01.037
Cited 12 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-18315