Dot and Ripple Nanopatterns on Ge Surfaces by Normal and Tilted Bombardment with Bi2 and Bi3 Ions

The self-organisation of surface pattern on (001)Ge was investigated after bombardment with different heavy bismuth species of monomers Bi+, Bi++ and clusters Bi2+, Bi3+, Bi4+, and Bi3++, obtained from a Bi-liquid metal ion source [1] in a mass separating 30 kV focused ion beam system. The surface patterns, depending on the angle of ion cluster incidence at ion irradiation differ drastically from the well-known porous or sponge-like nanostructures formed on Ge at monomer ion irradiation so far: the surface remains crystalline as proven by Raman measurements, and the dots and ripples heights were in the order of their wavelengths in contrast to monomer irradiation where an porous surface layer was obtained. The structure formation was investigated in the fluence range from1015 to 1017 ions/cm2 as a function of angle of incidence and energy per atom of the different projectile ions. The high mass of the cluster ions leads to a patterning mechanism different from the Bradley-Harper model, which becomes strikingly apparent by the crystalline Ge surface. An identified threshold of this new patterning mode could help to understand the mechanism: The ion-impact-induced deposition of energy per volume (as estimated by SRIM) must exceed a value which coincides with the energy needed for melting. Thus, Bi segregation during melt pool re-solidification and the 5% volume difference between molten and solid Ge can cause the observed Bi separation and Ge patterning, respectively. A consistent, qualitative model will be discussed. [1] L. Bischoff, W. Pilz, P. Mazarov, and A.D. Wieck, Appl. Phys. A 99 (2010) 145.