Persistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field
Persistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field
Kaspar, T.; Fiedler, J.; Skorupa, I.; Bürger, D.; Mücklich, A.; Fritzsche, M.; Schmidt, O. G.; Schmidt, H.
Abstract
Transparent metal-semiconductor field-effect transistors (MESFETs) with a ZnCoO channel have been fabricated by pulsed laser deposition on c-plane sapphire substrates at a temperature of 550 degrees C. The paramagnetic properties have been confirmed by magnetotransport measurements on undepleted ZnCoO films without Schottky gate contacts.
The Au/AgxO Schottky gate contacts were processed by optical lithography and metallization. Below 50 K, the MESFET characteristics are persistently changed from a low resistance state (LRS) to high resistance state by an external magnetic field. The MESFET can be switched back into the LRS only by heating it up to room temperature.
Keywords: metal-semiconductor field-effect transistor
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 18758) publication
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IEEE Electron Device Letters 34(2013)10, 1271-1273
DOI: 10.1109/LED.2013.2278538
ISSN: 0741-3106
Cited 4 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-18758