Extra-long hole spin relaxation time in InGaAs/GaAs quantum wells probed by cyclotron resonance spectroscopy

Drachenko, O.; Kozlov, D.; Ikonnikov, A.; Spirin, K.; Gavrilenko, V.; Schneider, H.; Helm, M.; Wosnitza, J.

Extra-long hole spin relaxation time in InGaAs/GaAs quantum wells probed by cyclotron resonance spectroscopy

Drachenko, O.; Kozlov, D.; Ikonnikov, A.; Spirin, K.; Gavrilenko, V.; Schneider, H.; Helm, M.; Wosnitza, J.

Abstract

We report a long, ms range, spin relaxation time of holes in InGaAs/GaAs quantum wells probed by cyclotronresonance spectroscopy in pulsed magnetic fields up to 60 Tesla. We found a strong hysteresis in the spectral weights of the cyclotron resonance absorption when a rapidly changing magnetic field is used for the experiment, while the hysteresis vanishes when a much slower changing magnetic field is used. We attribute this behavior to a long, comparable to the magnetic-field rise time, energy relaxation time between the two lowest spin-split hole Landau levels, i.e., a long hole spin relaxation time.

Keywords: cyclotron resonance spectroscopy; hole spin relaxation; pulsed magnetic fields; InGaAs/GaAs quantum well

Beteiligte Forschungsanlagen

Hochfeld-Magnetlabor (HLD)

Vortrag (Konferenzbeitrag)
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013), 01.-06.09.2013, Mainz, Deutschland
Beitrag zu Proceedings
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013), 01.-06.09.2013, Mainz, Deutschland: IEEE Xplore Digital Library
DOI: 10.1109/IRMMW-THz.2013.6665921

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