Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

The integration of III-V compound semiconductors into silicon is a substantial research field for the progress of micro- and optoelectronic device technology. We fabricated various III-V compound semiconductor nanocrystals (NCs) in Si and SOI substrates by sequential high fluence ion beam implantation and ultra-short flash lamp annealing (FLA). Single-crystalline GaAs, GaP, GaSb, InAs, InP and InSb NCs were grown by liquid phase epitaxy during FLA. Additionally, precise positioning of NCs was achieved by using a lithographically patterned aluminum mask layer for ion implantation.

The characterization of the NCs was performed by using Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Rutherford Backscattering (RBS). Raman measurements confirmed the formation of III-V NCs. AFM and SEM were used to control surface morphology and to investigate the lateral NC distribution. RBS monitored the distribution of the implanted ions. TEM images show distinct, single-crystalline NCs of various shapes. The shape and size of the NCs varies from large domes over small spherical precipitates to conical and pyramidal nanostructures depending on the processing conditions.