Ge(1-x)Sn(x) alloys synthesized by ion implantation and pulsed laser melting
Ge(1-x)Sn(x) alloys synthesized by ion implantation and pulsed laser melting
Gao, K.; Prucnal, S.; Huebner, R.; Baehtz, C.; Skorupa, I.; Wang, Y.; Skorupa, W.; Helm, M.; Zhou, S.
Abstract
The tunable bandgap and the high carrier mobility of Ge(1-x)Sn(x) alloys stimulate a large effort for bandgap and strain engineering for Ge based materials using silicon compatible technology. In this letter we present the fabrication of highly mismatched Ge(1-x)Sn(x) alloys by ion implantation and pulsed laser melting with Sn concentration ranging from 0.5 at. % up to 1.5 at. %. According to the structural investigations, the formed Ge(1-x)Sn(x) alloys are monocrystalline with high Sn-incorporation rate. The shrinkage of the bandgap of Ge(1-x)Sn(x) alloys with increasing Sn content is proven by the red-shift of the E1 and E1+Δ1 critical points in spectroscopic ellipsometry. Our investigation provides a chip technology compatible route to prepare high quality monocrystalline Ge(1-x)Sn(x) alloys.
Keywords: Ge(1-x)Sn(x) alloys; ion implantation; pulsed laser melting
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 20629) publication
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Applied Physics Letters 105(2014)4, 042107
DOI: 10.1063/1.4891848
Cited 21 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-20629