Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Microelectronics today is still based on the silicon technology it has been employing for the past 40 years even though it has been highly optimised and iteratively refined. Yet, it will come to a point where new concepts will be needed when “More Moore” has been extended to its ultimate limits. This is why there is a high interest in researching different approaches, e.g., with added functionality (“More-than-Moore”) [1] or even completely different concepts going “beyond Moore” like molecular electronics.

In the first part of this paper we present recent work on the top-down fabrication of silicon nano wire field effect transistors (FET) with two gates allowing not only for the control of the current through the device as it is done in a conventional FET but also to switch between the conduction mechanism, i.e., p- or n-type behaviour. It has been demonstrated previously that this kind of device can be used to build circuits [2,3]. However, we want to extend the principle from single nano wire devices to complex integrated circuits.

The second part will then go “beyond Moore” to illustrate results from our research on two challenges in the field of molecular electronics: Joining bottom-up with top-down techniques to form electrical contacts to nano objects on the one hand. We employ ion beam treatment of the substrate to form a preferential alignment for DNA templated wires. These will ultimately be used for DNA templated quantum dot transistors. On the other hand we will present a single molecular switch sensitive to light in the UV/VIS regime [4].

[1] ITRS “More-than-Moore” White Paper (2010) – http://www.itrs.net/papers.html
[2] A. Heinzig et al., Nano Lett. 12 (1) 119–124 (2012)
[3] T. Mikolajick et al., Phys. Status Solidi Rapid Res. Lett. 7 (10), 793–799
[4] Y. Kim et al., Nano Lett. 12 (7) 3736–3742 (2012)