Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

AMR depends on the angle between applied current and the direction of the internal magnetization. The influence of magnetic domains on the AMR is still not fully understood. Therefore it is important to observe the domain structure while measuring the AMR. To observe the domain structure Kerr microscopy based on the magneto-optical Kerr effect was applied. For measuring the AMR during imaging, the sample holder was equipped with electrical contacts in four-point style.The investigated permalloy films are stripe patterned by Implantation.The implantation leads to a lower saturation magnetization in the implanted stripes compared to the non-implanted ones. Our measurements show a clear correlation between AMR and the magnetic domain structur.

Here we present how simultaneous anisotropic magnetoresistance (AMR) and Kerr microscopy measurements of patterned samples can be applied to develop new types of magnetic sensors. One observes that the AMR has a minmum value if the magnetization is perpendicular to the current and a maximum value if parallel. Without patterning Permalloy the resistance shows a symmetric behavior. By introducing a certain stripe structure it was possible to achieve a sinusoidal resistance.