Low energy proton radiation impact on 4H-SiC nMOSFET gate oxide stability
Low energy proton radiation impact on 4H-SiC nMOSFET gate oxide stability
Florentin, M.; Alexandru, M.; Constant, A.; Schmidt, B.; Millán, J.; Godignon, P.
Abstract
The 4H-SiC MOSFET electrical response to 180 keV proton radiations at three different fluences has been evaluated. For a certain dose, the devices show an improvement of their electrical characteristics likely due to the N and/or H atoms diffusion inside the oxide layer. This work shows that not only the 4H-SiC material is robust to the radiation, but also a MOSFET build on this material can withstand it, and even its electrical performance results improved if submitted to an appropriate fluence.
Keywords: Charge trapping; Mobility; Proton irradiation; SiC MOSFET; Threshold voltage; Time bias stress instability
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 21022) publication
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Beitrag zu Proceedings
The International Conference on Silicon Carbide and Related Materials, 29.09.-04.10.2013, Miyazaki, Japan
Materials Science Forum, Switzerland: TransTech Publications Inc., 978-303835010-1, 778-780
DOI: 10.4028/www.scientific.net/MSF.778-780.525
Cited 4 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-21022
