Role of Mn in a Magnetic Semiconductor: InMnP
Role of Mn in a Magnetic Semiconductor: InMnP
Khalid, M.; Weschke, E.; Hübner, R.; Baehtz, C.; Skorupa, W.; Helm, M.; Zhou, S.
Abstract
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at.%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at.% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.
Keywords: III-V magnetic semiconductors
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
- Rossendorf Beamline an der ESRF DOI: 10.1107/S1600577520014265
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 21054) publication
- DOI: 10.1107/S1600577520014265 is cited by this (Id 21054) publication
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Poster
Moscow International Symposium on Magnetism MISM-2014, 29.06.-03.07.2014, Moscow, Russia
Permalink: https://www.hzdr.de/publications/Publ-21054