Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

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Charged defects and defect-induced processes in nitrogen films

Savchenko, E.; Khyzhniy, I.; Uyutnov, S.; Barabashov, A.; Gumenchuk, G.; Ponomaryov, A.; Bondybey, V.

Abstract

Radiation effects in solid nitrogen irradiated with an electron beam were studied with emphasis on the role of charged centers in radiation-induced phenomena. The experiments were performed employing luminescence method and activation spectroscopy techniques - spectrally resolved thermally stimulated luminescence TSL and thermally stimulated exoelectron emission. Samples were probed in depth by varying electron energy, thus discriminating radiation-induced processes in the bulk and at the surface. Spectroscopic evidence of the excited N2 * (C3Πu) molecule desorption was obtained for the first time and mechanism of the phenomenon based on recombination of electron with intrinsic charged center N4 + was proposed. The key role of N3 + center dissociative recombination in generation of N radicals is suggested.

Beteiligte Forschungsanlagen

  • Hochfeld-Magnetlabor (HLD)

Permalink: https://www.hzdr.de/publications/Publ-21701