Mobility Investigations on Strained 30-nm High-k Metal Gate MOSFETs by Geometrical Magnetoresistance Effect
Mobility Investigations on Strained 30-nm High-k Metal Gate MOSFETs by Geometrical Magnetoresistance Effect
Beister, J.; Wachowiak, A.; Boschke, R.; Herrmann, T.; Uhlarz, M.; Mikolajick, T.
Abstract
In this paper, we present mobility investigations of strained nMOS and pMOS short-channel transistors with dimensions down to 30-nm gate length. Using the geometrical magnetoresistance (MR) effect, carrier mobility of electrons and holes in the inversion channel of a recent state-of-the-art CMOS technology is presented from linear to saturation operation conditions. The MR effect allows for a more direct access to the carrier mobility compared with the conventional current/voltage and capacitance/voltage mobility derivation methods, in which series resistance, inversion charge density, and effective channel length are necessary to extract the mobility values of the short-channel devices. In another way, the MR effect can help to disentangle the performance gain of the strained state-of-the art devices to changes in channel mobility or device connection, e.g., series resistance effects.
Beteiligte Forschungsanlagen
- Hochfeld-Magnetlabor (HLD)
-
IEEE Transactions on Electron Devices 62(2015)6, 1819-1825
DOI: 10.1109/TED.2015.2423974
ISSN: 0018-9383
Cited 3 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-21987