Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy
Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy
Eßer, F.; Drachenko, O.; Patanè, A.; Ozerov, M.; Winnerl, S.; Schneider, H.; Helm, M.
Abstract
We use cyclotron resonance THz-spectroscopy in pulsed magnetic fields up to 63 T to measure the electron effective mass in Si-doped GaAsN semiconductor alloys with nitrogen content up to 0.2%. This technique directly probes the transport properties of the N-modified conduction band, particularly the electron effective mass, which has been discussed controversially in the experimental and theoretical literature. We report a slight increase of the electron effective mass and nonparabolicity with Ncontent for different photon energies in agreement with the two-level band anticrossing model calculations. Furthermore, we show a pronounced electron mobility drop with increasing N-content.
Keywords: GaAsN; effective mass; cyclotron resonance spectroscopy; III-N-V alloy
Beteiligte Forschungsanlagen
- Strahlungsquelle ELBE DOI: 10.17815/jlsrf-2-58
- Hochfeld-Magnetlabor (HLD)
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 22057) publication
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Applied Physics Letters (2015), 062103-1-062103-4
DOI: 10.1063/1.4928623
Cited 10 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-22057