Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf
1 PublikationEnergy filter for tailoring depth profiles in semiconductor doping application
Csato, C.; Krippendorf, F.; Akhmadaliev, S.; von Borany, J.; Han, W.; Siefke, T.; Zowalla, A.; Rüb, M.
Abstract
This work presents the physics and technology of a micromechanically fabricated ‘‘energy filter’’ for doping applications. This energy filter is capable of producing pre-defined tailored doping profiles by a single monoenergetic ion implantation. The functional principle of the energy filter is explained using a simple model. Pattern transfer is being investigated for two different filter-substrate distances. Different aspects of the filter’s temperature behavior during irradiation are discussed. Finally, the results of an entire wafer area implantation are presented and discussed.
Keywords: Implantation; Ion; Energy filter; Silicon carbide; Doping homogeneity
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 22965) publication
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Nuclear Instruments and Methods in Physics Research B 365(2015), 182-186
DOI: 10.1016/j.nimb.2015.07.102
Cited 9 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-22965