Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Metal induced crystallization (MIC) is a promising technique for thin film transistor fabrication and graphene synthesis. In MIC, a transition metal catalyzes the crystallization of the amorphous phase of a group IV element by bond screening near the interface and facilitation of nucleation. So far, in situ studies have been performed using X-ray diffraction which is sensitive to the degree of crystallinity. However this technique lacks depth resolution and is therefore unable to track diffusion and layer exchange.
Here, the Si/Ag and C/Ni bilayer systems are studied. The samples are annealed at temperatures of up to 750 °C. Simultaneously, depth profiles of the elements are investigated by in situ Rutherford backscattering spectroscopy revealing the diffusion kinetics. The changes in the phase structure are explored by in situ Raman spectroscopy. Both the quick initial nucleation and ensuing growth processes are investigated. Scanning electron microscopy provides insight to the surface morphology.