Ferromagnetic Mn-Implanted GaP: Microstructures vs Magnetic Properties
Ferromagnetic Mn-Implanted GaP: Microstructures vs Magnetic Properties
Yuan, Y.; Hübner, R.; Liu, F.; Sawicki, M.; Gordan, O.; Salvan, G.; Zahn, D. R. T.; Banerjee, D.; Baehtz, C.; Helm, M.; Zhou, S.
Abstract
Ferromagnetic GaMnP layers were prepared by ion implantation and pulsed laser annealing (PLA). We present a systematic investigation on the evolution of microstructure and magnetic properties depending on the pulsed laser annealing energy. The sample microstructure was analyzed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), ultraviolet Raman spectroscopy (UV-RS), and extended X-ray absorption fine structure (EXAFS) spectroscopy. The presence of X-ray Pendellösung fringes around GaP (004) and RBS channeling prove the epitaxial structure of the GaMnP layer annealed at the optimized laser energy density (0.40 J/cm2). However, a forbidden TO vibrational mode of GaP appears and increases with annealing energy, suggesting the formation of defective domains inside the layer. These domains mainly appear in the sample surface region and extend to almost the whole layer with increasing annealing energy. The reduction of the Curie temperature (TC) and of the uniaxial magnetic anisotropy gradually happens when more defects and the domains appear as increasing the annealing energy density. This fact univocally points to the decisive role of the PLA parameters on the resulting magnetic characteristics in the processed layers, which eventually determine the magnetic (or spintronics) figure of merit.
Keywords: GaMnP; ion implantation; pulsed laser annealing; dilute ferromagnetic semiconductors; microstructures; magnetic properties
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
- Rossendorf Beamline an der ESRF DOI: 10.1107/S1600577520014265
Verknüpfte Publikationen
- DOI: 10.1107/S1600577520014265 is cited by this (Id 23323) publication
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23323) publication
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ACS Applied Materials and Interfaces 8(2016), 3912-3918
DOI: 10.1021/acsami.5b10949
Cited 15 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-23323