Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation


Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation

Stephan, D.; Bhattacharyya, J.; Huo, Y. H.; Schmidt, O. G.; Rastelli, A.; Helm, M.; Schneider, H.

Abstract

We combine micro-photoluminescence with terahertz excitation to investigate the response of single self-assembled InAs/GaAs quantum dots to intense terahertz pulses tuned to the s-to-p transition. Spectra and transients of single photoluminescence lines reveal the dynamics of electrons upon excitation and subsequent relaxation back into the initial state. Under certain circumstances, the terahertz pulse can release trapped charge carriers which relax into the quantum dot. Furthermore, we demonstrate near-total depletion of the positive trion PL by an intense terahertz pulse.

Keywords: Quantum dots; Photoluminescence; Terahertz; Carrier relaxation

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