Bipolar resistive switching of p-YMnO₃/n-SrTiO₃:Nb junctions

Resistive switching (RS) phenomena of oxides in metal-insulatormetal structures have been widely investigated due to promising applications as a non-volatile memory and in neuromorphic circuits. In our previous works, we have demonstrated unipolar RS of YMnO₃-based structures [1]. This work investigates the non-volatile RS switching in Au/YMnO₃-/Nb:SrTiO₃-/Al structures with (p-YMnO₃-)-(n-Nb:SrTiO₃-) junctions. The YMnO₃- films are deposited by pulsed laser deposition on the (100)-SrTiO₃- doped with 0.5 wt.% of Nb substrates and exhibit bipolar RS. Observed RS behavior is assigned to the coupled electronic and ionic processes which depend on the depletion layer extension in the p-n junction. Exploitation of RS in p-n junctions offers additional functionalities of memristive devices, e.g. related to their optical properties.
[1] A. Bogusz et al., AIP Advances 4 (2014), A. Bogusz et al., Adv. Mater. Res. 1101 (2015).