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Comparison of SIMS and RBS for depth profiling of silica glasses implanted with metal ions

Lorinčík, J.; Veselá, D.; Vytykáčová, S.; Švecová, B.; Nekvindová, P.; Macková, A.; Mikšová, R.; Malinský, P.; Böttger, R.

Abstract

Ion implantation of metal ions, followed by annealing, can be used for the formation of buried layers of metal nanoparticles in glasses. Thus, photonic structures with nonlinear optical properties can be formed. In this study, three samples of silicaglasses were implanted with Cu+, Ag+, or Au+ ions under the same conditions (energy 330 keV and fluence 1 × 1016 ions/cm2), and compared to three identical silicaglass samples that were subsequently coimplanted with oxygen at the same depth. All the implantedglasses were annealed at 600 °C for 1 h, which leads to the formation of metal nanoparticles. The depth profiles of Cu,Ag, and Au were measured by Rutherford backscattering and by secondary ion mass spectrometry and the results are compared and discussed.

Keywords: Rutherford backscattering; Secondary ion mass spectroscopy; Gold; Silver; Amorphous metals

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Permalink: https://www.hzdr.de/publications/Publ-23456