Semiconductor spectroscopy with infrared and THz free-electron lasers
Semiconductor spectroscopy with infrared and THz free-electron lasers
Schneider, H.
Abstract
This talk reviews some recent spectroscopic studies on semiconductor structures carried out using the mid-infrared and terahertz (THz) free-electron laser facility FELBE in Dresden, Germany. Its intense, nearly transform-limited picosecond pulses, which can also be combined with synchronous pico- or femtosecond pulses from near-infared tabletop lasers, provide unique research opportunities to advance our knowledge on the interaction of intense mid-infrared and THz fields with materials and devices.
Keywords: Semiconductor spectroscopy; infrared; terahertz; free-electron laser
Beteiligte Forschungsanlagen
- Strahlungsquelle ELBE DOI: 10.17815/jlsrf-2-58
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 24031) publication
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Eingeladener Vortrag (Konferenzbeitrag)
2016 International Conference on "Synchrotron and Free electron laser Radiation: generation and application" (SFR-2016), 04.-07.07.2016, Novosibirsk, Russia
Permalink: https://www.hzdr.de/publications/Publ-24031
