Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf
1 PublikationEnhancement of carrier mobility in thin Ge layer by Sn co-doping
Prucnal, S.; Liu, F.; Berencén, Y.; Vines, L.; Bischoff, L.; Grenzer, J.; Andric, S.; Tiagulskyi, S.; Pyszniak, K.; Turek, M.; Drozdziel, A.; Helm, M.; Zhou, S.; Skorupa, W.
Abstract
We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasmaenhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.
Keywords: GeOI; flash lamp annealing; ion implantation; explosive recrystallization
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 24338) publication
-
Semiconductor Science and Technology 31(2016)105012
DOI: 10.1088/0268-1242/31/10/105012
Cited 10 times in Scopus
Downloads
- Final Draft PDF 646 kB Zweitveröffentlichung
Permalink: https://www.hzdr.de/publications/Publ-24338