Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

We explore the transient response of single self-assembled InAs/GaAs quantum dots (QD) to narrow-band terahertz (THz) pulses produced by the free-electron laser FELBE at HZDR. The THz excitation is tuned to the electron inter-sublevel s-to-p transition. For the QDs under study, this transition occurs in the range 13-20 meV because of in-situ intermixing. The THz pulse is applied at a time delay of about 0.7 ns after interband excitation. The dynamics of electron excitation and relaxation between QD sublevels is revealed by time-resolved micro-photoluminescence (PL) measurements performed on individual QDs.