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Terahertz free-electron laser spectroscopy of excitons in III-V semiconductor quantum wells and single quantum dots

Schneider, H.; Stephan, D. R.; Zybell, S.; Winnerl, S.; Bhattacharyya, J.; Eßer, F.; Helm, M.

Abstract

Using intense, spectrally narrow terahertz pulses from the free-electron laser facility FELBE in Dresden, Germany, we have investigated exciton population dynamics in III-V QWs and single quantum dots. To this end, carriers are optically injected by picosecond near-infrared pulses to populate the lowest excitonic level. Using narrowband terahertz pulses, excitons are resonantly excited into higher levels. Time-dependent photoluminescence measurements based on a streak camera system and on time-correlated photon counting, respectively, then allow us to study the transient population of dipole-allowed higher exciton levels and to access the relaxation dynamics.

Keywords: excitons; GaAs; quantum well; quantum dot; terahertz; free-electron laser; time-resolved photoluminescence

Beteiligte Forschungsanlagen

Verknüpfte Publikationen

  • Eingeladener Vortrag (Konferenzbeitrag)
    SPIE Photonics Asia, Symposium on "Infrared, Millimeter Wave, and Terahertz Technologies", 12.-14.10.2016, Beijing, China

Permalink: https://www.hzdr.de/publications/Publ-24404